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STAR1000
1M Pixel Radiation Hard CMOS Image Sensor
Features
The STAR1000 sensor has the following characteristics:

operation modes such as (multiple) windowing, subsampling, and so on. The CYIS1SM1000AA-HHC has a BK7G18 glass lid, and the cavity is filled with N2 which increases the temperature operating range. The CYIS1SM1000AA-HHCS is similar to the CYIS1SM1000AA-HHC; it has a BK7G18 glass lid and a N2 filled cavity, but is also screened and tested to space qualified device standards.
Integrating 3-transistor Active Pixel Sensor 1024 by 1024 pixels on 15 mm pitch Radiation tolerant design On-chip double sampling circuit to cancel Fixed Pattern Noise Electronic shutter Read out rate: up to 11 full frames per second Region of Interest (ROI) windowing On-chip 10-bit ADC Programmable gain amplifier Ceramic JLCC-84 package Available with BK7G18 glass and with N2 filled cavity
Sensor Description
The STAR1000 is a CMOS image sensor with 1024 by 1024 pixels on a 15 mm pitch. It features on-chip Fixed Pattern Noise (FPN) correction, a programmable gain amplifier, and a 10-bit Analog-to-Digital Converter (ADC). All circuits are designed using the radiation tolerant design rules for CMOS image sensors, to allow high tolerance against total dose effects. Registers that are directly accessed by the external controller contain the X- and Y- addresses of the pixels to be read. This architecture provides flexible operation and allows different
Ordering Information
Marketing Part Number CYIS1SM1000AA-HHC CYIS1SM1000AA-HHCS Description Mono with BK7G18 Glass Mono with BK7G18 Glass, Space Qualified Package 84 pin JLCC
Cypress Semiconductor Corporation Document Number: 38-05714 Rev. *F
*
198 Champion Court
*
San Jose, CA 95134-1709 * 408-943-2600 Revised January 25, 2011
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Contents
Features ............................................................................... 1 Sensor Description ............................................................. 1 Ordering Information .......................................................... 1 Contents .............................................................................. 2 Sensor Specifications ........................................................ 3 General Specifications .................................................. 3 Electro-optical Specifications ........................................ 3 Spectral Response ........................................................ 5 Photo Voltaic Response ................................................ 5 Absolute Maximum Ratings ........................................... 6 Architecture ........................................................................ 8 Floor Plan ...................................................................... 8 Pixel Array ..................................................................... 8 Addressing Logic ........................................................... 9 Column Amplifiers ......................................................... 9 Output Amplifier and Analog Multiplexer ....................... 9 ADC ............................................................................... 9 Timing and Control Signals ............................................... 9 Row Selection and Reset Timing .................................. 9 Pixel Read Out Timing ................................................ 11 Pin List ................................................................................13 Packaging and Geometrical Constraints ........................17 Package Drawing .........................................................17 Die Alignment ...............................................................19 Glass Lids .....................................................................19 Handling Precautions ........................................................20 Limited Warranty ...............................................................20 Return Material Authorization (RMA) ...........................20 Ordering Code Definition ..................................................20 RoHS (Pb-free) Compliance .........................................20 Information on Pb-Free Soldering ................................20 Acronyms ...........................................................................21 Glossary .............................................................................22 STAR1000 Evaluation System ..........................................23 Document History Page ....................................................24 Sales, Solutions, and Legal Information .........................24 Worldwide Sales and Design Support ..........................24
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Sensor Specifications
General Specifications
Table 1. General Specifications of STAR1000 Sensor Parameter Detector technology Pixel structure Photodiode Sensitive area format Pixel size Pixel output rate Windowing Electronic shutter Total dose radiation tolerance Specification CMOS active pixel sensor 3-transistor active pixel High fill factor photodiode 1024 x 1024 pixels 15 x15 m2 12 MHz X- and Y- addressing random programmable Electronic rolling shutter. Range - 1:1024 > 250 Krad (Si) Integration time is variable in time steps equal to the row readout time. Pixel test structures with a similar design have shown total dose tolerance up to several Mrad. Note: Dark current and DSNU are dependent of radiation dose. Speed can be altered for power consumption. Radiation-tolerant pixel design. Using N-well technique. Comment
Proton radiation tolerance 2,4.1011 proton/cm2 At 60 MeV SEU tolerance > 127,8 MeV cm3 mg-1
Electro-optical Specifications
Table 2. Electro-optical Specifications of STAR1000 Sensor Value Parameter Typical Value Spectral range Quantum efficiency x fill factor Full well capacity Saturation capacity to meet non-linearity within + 5% Output signal swing Conversion gain kTC noise Dynamic range Fixed pattern noise 400-1000 20% 135.000 99.000 eeUnit nm Average over the visual range. See spectral response curve. Comment
1.1 11.4 47 69 Local: 1 < 0.30% Global: 1 <0.56% of full well Local: 1 < 0.67% Global: <3.93% of full well
V V/eedB
Photo response non-uniformity at Sat/ 2 (RMS)
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Table 2. Electro-optical Specifications of STAR1000 Sensor (continued) Value Parameter Typical Value Average dark current at 293K Dark current signal DSNU signal Optical cross-talk at 600 nm Anti-blooming capacity Output amplifier gain Analogue input bandwidth Analogue input signal range Analog-to-Digital converter ADC Differential Non-Linearity (DNL) ADC Integral Non-Linearity (INL) Supply voltage Power dissipation 223 3135 1.055% of Vsat Vertical: 16% Horizontal: 17.5% x 1000 x1, x2.47, x4.59 and x8.64 9.5 0.1 to 4.9 10 <= 3.5 <= 5.8 5 <350 <100 MHz V bit LSB LSB V mW Integral non-linearity of ADC is better than linearity of image sensor. Digital input signals are 3.3V compatible. With internal ADC powered. Without internal ADC powered. Both values measured at nominal speed (12 MHz). Radiation-tolerant version of the ADC on Ibis4 and other image sensors. Controlled by 2 bits. Unit A/cm2 e-/s Dark current rises 425 e-/s per Krad. DSNU rises 14 e-/s per Krad. Comment
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Spectral Response
Figure 1. Spectral Response Curve
0.16
QE 0.3
0.14
QE 0.2
0.12
Spectral response [A/W]
0.1
0.08
QE 0.1
0.06
0.04
QE 0.05
0.02
QE 0.01
0 400
500
600
700
800
900
1000
Wavelenght [nm]
Photo Voltaic Response
Figure 2. Photo Voltaic Response Curve
1,2 1 0,8 0,6 0,4 0,2 0 0 20000 40000 60000 80000 100000 120000 140000 160000 180000 Number of electrons
Document Number: 38-05714 Rev. *F
Voltage swing at output [V]
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Absolute Maximum Ratings
Table 3. Absolute Maximum Ratings STAR1000 Limits Characteristics Min Any supply voltage Voltage on any input terminal Operating temperature Storage temperature Sensor soldering temperature -0.5 -0.5 0 -10 NA Max +7 Vdd + 0.5 +60 +60 125 V V C C C Temperature range confirmed by evaluation testing. Not longer than 1 hour. Temperature range confirmed by evaluation testing. Hand soldering only. The sensor's temperature may not rise above this limit. Read the Handling Precautions on page 20 for more information. R Units Remarks
Table 4. Absolute Maximum Ratings STAR1000BK7 and STAR1000SP Limits Characteristics Min Any supply voltage Voltage on any input terminal Operating temperature Storage temperature -0.5 -0.5 -40 -40 -40 Sensor soldering temperature NA Max +7 Vdd + 0.5 +85 +85 +120 125 C V V C C Temperature range confirmed by evaluation testing. Temperature range confirmed by evaluation testing. Maximum 1 hour. Hand soldering only. The sensor's temperature may not rise above this limit. Read the Handling Precautions on page 20 for more information. Units Remarks
Table 5. DC Operating Conditions Limits Symbol VDDA VDDD VDD_ADC_ANA VDD_ADC_DIG VDD_DIG_OUT VRES VREF GNDA Parameter Min Analog supply of the image core. Digital supply of the image core. Analog supply of the ADC circuitry. Digital supply of the ADC circuitry. Power supply of ADC digital output stage. Reset level for RESET signal. Reset level for RESET_DS signal. Analog ground of the image core. 4 0 Typ 5 5 5 5 5 5 5 Max V V V V V V V V Units
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Table 5. DC Operating Conditions (continued) Limits Symbol GNDD GND_ADC_ANA GND_ADC_DIG VIH VIL VOH VOL Parameter Min Digital ground of the image core. Analog ground of the ADC circuitry. Digital ground of the ADC circuitry. Logical '1' input voltage. Logical '0' input voltage. Logical '1' output voltage. Logical '0' output voltage. 1.8 0 4.25 Typ 0 0 0 VDDD 1 VDDD 1 Max V V V V V V V Units
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Architecture
Floor Plan
Figure 3. STAR1000 Floor Plan
Reset Reset_DS Vref Ld_Y 10 Latch A0....A9 Y Address Decoder and Logic Rst 1024 Pixel Array 1024 x 1024 pixels 10
D0...D9
Col 1024 Rst Rd Rd
10-bit ADC Clk_ADC
Ain
1024 10
S R 1024
Column Amplifiers 1024 1024 Rst Sig Progr. Gain Amplifier Multiplexer Buffer Aout
Clk_X 1024 10
X Register
X Address Decoder Latch
Ain1 Ain2 Ain3
Blackref Cal
Ld_X
The image sensor contains five sections: the pixel array, the Xand Y- addressing logic, the column amplifiers, the output amplifier and the ADC. Figure 3 shows an outline diagram of the sensor, including an indication of the main control signals. The following paragraphs explain the function and operation of the different imager parts in detail.
The reset lines and the read lines of the pixels in a row are connected together to the Y- decoder logic; the outputs of the pixels in a column are connected together to a column amplifier. Figure 4. Architecture of the 3T Pixel
Pixel Array
The pixel array contains 1024 by 1024 active pixels at 15 m pitch. Each pixel contains one photo diode and three transistors (Figure 4). The photo diode is always in reverse bias. At the beginning of the integration cycle, a pulse is applied to the reset line (gate of T1) bringing the cathode of D1 to the reset voltage level. During the integration period, photon-generated electrons accumulate on the diode capacitance reducing the voltage on the gate of T2. The real illumination dependent signal is the difference between the reset level and the output level after integration. This difference is created in the column amplifiers. T2 acts as a source follower and T3 allows connection of the pixel signal (reset level and output level) to the vertical output bus.
Reset
T1 Read T2 Column Bus
Sel0
Sel1
G0f G1
T3
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Addressing Logic
The addressing logic allows direct addressing of rows and columns. Instead of the one-hot shift registers that are often used, address decoders are implemented. One can select a line by presenting the required address to the address input of the device and latching it to the Y- decoder logic. Presenting the X- address to the device address input and latching it to the X- address decoder can select a column. A typical line read out sequence first selects a line by applying the Y-address to the Y-decoder. Activation of the LD_Y input on the Y-logic connects the pixel outputs of the selected line to the column amplifiers. The individual column amplifier outputs are connected to the output amplifier by applying the respective X- addresses to the X- address decoder. Applying the appropriate Y- address to the Y- decoder and activating the "Reset" input reset a line. The integration time of a row is the time between the last reset of this row and the time when it is selected for read out. The Y- decoder logic has two different reset inputs: RESET and RESET_DS. Activation of RESET resets the pixel to the Vdd level; activation of RESET_DS resets the pixel to the voltage level on the VREF input. This feature allows the application of the so called dual slope integration. If dual slope integration is not needed, VREF is tied to Vdd and RESET_DS must never be activated.
Output Amplifier and Analog Multiplexer
The output amplifier combines subtraction of pixel signal level from reset level with a programmable gain amplifier. Because the amplifier is AC coupled, it also contains a provision to maintain and restore the proper DC level. An analog signal multiplexing feeds the pixel signal to the final unity gain buffer, providing the required drive capability. Apart from the pixel signal, three other external analog signals can be fed to the output buffer. All these signals can be digitalised by the on-chip ADC if the output of this buffer is externally connected to the input of the ADC. The purpose of the additional analog inputs (A_IN1, A_IN2, and A_IN3) is to allow the possibility of processing other analog signals through the image sensors signal path. These signals can then be converted by the ADC and processed by the image controller FPGA. The additional analog inputs are intended for low frequency or DC signals and have a reduced bandwidth compared with the image signal path.
ADC
The image sensor has a 10-bit ADC that is electrically separated from the rest of the image sensor circuits and can be powered down if an external ADC is used. The conversion takes place at the falling edge of the clock and the output pins can be disabled to allow operation of the device in a bus structure.
Column Amplifiers
All outputs from the pixels in a column are connected in parallel to a column amplifier. This amplifier samples the output voltage and the reset level of the pixel whose row is selected at that moment and presents these voltage levels to the output amplifier. As a result, the pixels are always reset immediately after read out as part of the sample procedure. Note that the maximum integration time of a pixel is the time between two read cycles.
Timing and Control Signals
The pixels addressing is done by direct addressing of rows and columns. This approach has the advantage of full flexibility when accessing the pixel array: multiple windowing and subsampled read out are possible by proper programming. The following paragraphs clarify the timing for row and column readout.
Row Selection and Reset Timing
Figure 5 on page 10 shows the timing of the line sequence control signals. The timing constraints are presented in Table 6 on page 10 The address, presented at the address IO pins (A0...A9) is latched in with the LD-Y pulse (active low). After latching, the external controller already produces a new address.
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Figure 5. Line Selection and Reset Sequence
A0......A9
Read Address
Reset Address
k LD_Y
l
m
k
l
m
INTERNAL
Row Selected for Readout
Row Selected for Reset
a b S c f d RESET d
g
e b R h CAL (Once each frame) i
ROW READOUT
Time Available for Readout of Row Y-1
Idle
Time Available for X-readout of Row Y
Latching in a Y- address selects the addressed row and connects the pixel outputs of that row to the column amplifiers. Through the sequence of the S and R pulse and the reset pulse in between the pixel output signal and reset level are sampled and produced at the output of the column amplifier (to do the FPN double sampling correction). Table 6. Timing Constraints of Line Sequence Symbol a Min 3.6 s Typ
At this time horizontal read out of the selected row is started and another row is reset to effectuate reduced integration time (electronic rolling shutter).
Description Delay between selection of a new row and falling edge on S. Minimal value: For maximum, speed a new row can already be selected during X- read out of the previous row. Duration of S and R pulse.
b c d
0.4 s 0 200 ns 100 ns
Delay between falling edge of S and rising edge of reset. Minimum duration of reset pulse.
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Table 6. Timing Constraints of Line Sequence (continued) Symbol e f g h i k l m 100 ns 100 ns 10 ns 20 ns 10 ns Min 1.6 s 0 100 ns g 200 ns 1 s Typ Description Delay between falling edge of reset and falling edge of R. Minimum delay between falling edge on LD_Y and rising edge of reset. Minimum required extension of Y- address after falling edge of reset pulse. Position of cal pulse after rising edge of S. The cal pulse must only be given once per frame. Duration of cal pulse. Address set up time. Load register value. Address stable after load.
Pixel Read Out Timing
Figure 6 on page 12 shows the timing of the pixel readout sequence. The external digital controller presents a column address that is latched by the rising edge of the LD_X pulse. After decoding the X- address the column selection is clocked in the X- register by CLK-X. The output amplifier uses the same pulse to subtract the pixel output level from the pixel reset level and the signal level. This causes a pipeline effect such that the analog output of the first pixel is effectively present at the device output terminal at the third rising edge of the X-CLK signal. The ADC conversion starts at the falling edge of the CLK-ADC signal and produces a valid digital output 20 ns after this edge. The timing constraints are given in Table 7 on page 12. Important note: The values of the X shift-register tend to leak away after a while. Therefore, it is very important to keep the CLK_X signal asserted for as long as the sensor is powered up. If the sensor sits idle and CLK_X is not asserted, the leakage of the X shift-register causes multiple columns to be selected at once. This forces high current through the sensor and may cause damage.
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Figure 6. Column Selection and Read Out Sequence
A0......A9 Row Idle Time X1 X2 X3 X4 X5 X6 X7 X8
LD_X
a
b
CLK_X
X1 ANALOG OUTPUT Undefined Output Level
X2
X3
X4
X5
X6
CLK_ADC c
D9......D0
X1
X2
X3
X4
Table 7. Timing Constraints of Column Read Out Symbol a b c Min 20 ns 40 ns 0 20 ns Typ Address setup time. Address valid time. ADC output valid after falling edge of CLK_ADC. Description
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Pin List
Figure 7 displays the pin connections of the STAR1000. The tables that follow group the connections by their functionality. Figure 7. STAR1000 Pin Connections
Table 8. Pin List of the STAR1000 Sensor Pin 1 2 3 4 5 6 7 8 Pin Name A3 A4 A5 A6 A7 A8 A9 LD_Y Pin Type Input Input Input Input Input Input Input Input Digital Input. Latch address (A0...A9) to Y-register (0 = track, 1 = hold). Pin Description
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Table 8. Pin List of the STAR1000 Sensor (continued) Pin 9 10 11 12 13 14 Pin Name LD_X VDDA GNDD GNDA CLK_X RESET_DS Pin Type Input Supply Ground Ground Input Input Pin Description Digital input. Latch address (A0...A9) to X-register (0 = track, 1 = hold). Analog power supply of the imager (typical 5V). Digital ground of the imager. Analog ground of the imager. Digital input. Clock X-register (output valid & stable when CLK_X is high). Digital input (active high). Resets row indicated by Y-address (see sensor timing diagram). RESET_DS is used for dual-slope integration (see FAQ). GND is used for normal operation. Digital supply of the image sensor. Digital input (active high). Resets row indicated by Y-address (see sensor timing diagram). Digital input (active high). Control signal for column amplifier (see sensor timing diagram). Digital input (active high). Control signal for column amplifier (see sensor timing diagram). Analog input. Biasing of address decoder. Connect with 100 k to VDDA and decouple with 100 nF to GND. Additional analog inputs. For proper conversion with on-chip ADC, the input signal must lie within the output signal range of the image sensor (approximately +2V to +4V).
15 16 17 18 19 20 21 22 23 24 25
VDDD RESET S R NBIAS_DEC A_IN2 A_IN3 A_IN1 A_SEL1 A_SEL0 NBIAS_OAMP
Supply Input Input Input Input Input Input Input Input Input Input
Selection of analog channel: '00' selects image sensor ('01' selects A_IN1, '10' A_IN2, and '11' A_IN3). Analog input. Bias of output amplifier (speed/power control). Connect with 100 k to VDDA and decouple with 100 nF to GND for 12.5 MHz output rate (lower resistor values yield higher maximal pixel rates at the cost of extra power dissipation). Analog input. Biasing of the multiplexer circuitry. Connect with 20 k to GND and decouple with 100 nF to VDD. Digital input. Select output amplifier gain value: G0 = LSB, G1 = MSB ('00' = unity gain, '01' = x2, '10' = x4, '11' = x8). Digital input (active high). Initialization of output amplifier. Output amplifier outputs BLACKREF in unity gain mode when CAL is high (1). Apply pulse pattern (see sensor timing diagram). Analog Output Video Signal. Connected to the analog input of the internal (pin 52) 10-bit ADC or an external ADC. Analog input. Control voltage for output signal offset level. Buffered on-chip, the reference level can be generated by a 100 k resistive divider. Connect to 2V DC for use with on-chip ADC. Analog power supply of image core (typical 5V). Digital power supply of image core (typical 5V).
26 27 28 29
PBIAS G1 G0 CAL
Input Input Input Input
30 31
OUT BLACKREF
Output Input
32 33
VDDA VDDD
Supply Supply
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Table 8. Pin List of the STAR1000 Sensor (continued) Pin 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 Pin Name GNDA GNDD NBIAS_ARRAY n.c. n.c. n.c. n.c. n.c. n.c. n.c. n.c. n.c. n.c. n.c. TESTPIXARRAY PHOTODIODE NBIAS_ANA NBIAS_ANA2 IN_ADC Output Output Input Input Input Analog output of an array of 20 x 35 test pixels where all photodiodes are connected in parallel. Is used for electro-optical evaluation. Plain Photo Diode (without circuitry). Area of the photodiode = 20 x 35 pixels. Is used for electro-optical evaluation. Analog input. Analog biasing of the ADC circuitry. Connect with 100 k to VDDA and decouple with 100 nF to GND. Analog input of the internal ADC. Connect to analog output of image sensor (pin 30). Input range (typically 2V and 4V) of the internal ADC is set between by VLOW_ADC (pin 55) and VHIGH_ADC (pin 62). Analog power supply of the ADC (typical 5V). Analog ground of the ADC. Low reference voltage of internal ADC. Nominal input range of the ADC is between 2V and 4V. The resistance between VLOW_ADC and VHIGH_ADC is approximately 1.5 k. Connect with 1.5 k to GND and decouple with 100 nF to GND. Pin Type Ground Ground Input Pin Description Analog ground of image core. Digital ground of image core. Analog input. Biasing of the pixel array. Connect with 1M to VDDA and decouple with 100 nF capacitor to GND.
53 54 55
VDD_ADC_ANA GND_ADC_ANA VLOW_ADC
Supply Ground Input
56 57 58 59 60 61
n.c. PBIASDIG2 BITINVERT TRI_ADC D0 CLK Input Input Input Input Input Connect with 20 k to GND and decouple with 100nF to VDDA. Digital input. Inversion of the ADC output bits. 0 = invert output bits (0 => black, 1023; white, 0), 1 = no inversion of output bits (black, 0; white, 1023). Digital input. Tri-state control of digital ADC outputs (1 = tri-state, 0 = normal mode). ADC output bits.#D0 = LSB, D9=MSB. Digital input. ADC clock. ADC converts on falling edge.
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Table 8. Pin List of the STAR1000 Sensor (continued) Pin 62 Pin Name VHIGH_ADC Pin Type Input Pin Description High reference voltage of internal ADC. Nominal input range of the ADC is between 2V and 4V. The resistance between VLOW_ADC and VHIGH_ADC is about 1.5 k. Connect with 1.1 k to VDDA and decouple with 100 nF to GND. Analog ground of the ADC circuitry. Analog supply of the ADC circuitry (typical 5V). Digital supply of the ADC circuitry (typical 5V). Digital ground of the ADC circuitry. Power supply of ADC digital output. Connect to 5V for normal operation. Can be brought to lower voltage when image sensor must be interfaced to low voltage periphery. ADC output bits. #D0 = LSB, D9 = MSB.
63 64 65 66 67
GND_ADC_ANA VDD_ADC_ANA VDD_ADC_DIG GND_ADC_DIG VDD_DIG_OUT
Ground Supply Supply Output Supply
68 69 70 71 72 73 74 75
D1 D2 D3 D4 D5 VDDA GNDA GND_AB
Output Output Output Output Output Supply Ground Supply
Analog supply of the image core (typical 5V). Analog ground of the image core (typical 5V). Anti-blooming drain control voltage. Default: connect to ground where the anti-blooming is operational but not maximal. Apply 1V DC for improved anti-blooming. Analog supply. Reset level for RESET_DS. Is used for extended optical dynamic range. See FAQ for more details. Analog supply. Reset level for RESET (typical 5V). ADC output bits. #D0 = LSB, D9 = MSB.
76 77 78 79 80 81 82 83 84
VREF VRES D6 D7 D8 D9 A0 A1 A2
Supply Supply Output Output Output Output Input Input Input
Digital input. Address inputs for row and column addressing. A9 = LSB, A0 = MSB.
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Packaging and Geometrical Constraints
Package Drawing
The detector is packaged in an 84-pin J-leaded package. The detector is mounted into position with thermally and electrically conductive adhesive. The bottom plate of the cavity is electrically connected to a ground pin. The detector is positioned into the cavity such that the optical center of the detector coincides with the geometrical center of the cavity within a tolerance of 50 m in X- and Y direction. The tolerance on the parallelism of the detector is 50 m in X- and Y- direction. Note: The dimensions in Figure 8 are in inches. Figure 8. Package Drawing
001-07592 *C
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Table 9. Mechanical Specifications Characteristics Package tolerance Die position, X offset Die position, Y offset Die position, planarity Die position, Y tilt -0.05 0.15 -0.05 -0.05 0 0 0 Symbol Min Limits Typ Max 0.15 0.05 0.30 0.05 0.05 mm mm mm mm mm Units
Note: Min and Max limits are not measured on every unit, but guaranteed by assembly process.
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Die Alignment
Figure 9. Die Alignment
Parallelism in X and Y within + 50 mm
200
Y Pin 1 Centre of Cavity and of FPA X Offset Between Centre of Silicium and Centre of Cavity: X: 52 m Y: 200 m
Centre of Silicium A
A
52
Bonding Cavity: 0.508+0.051 Die Cavity: 0.508+0.051
Die: 0.508+0.01
Glass Window: 1.0+/-0.05 Window Adhesive: 0.08+0.02
ASection A
Die Adhesive: 0.08+0.02
Drawing Not to Scale
Glass Lids
The STAR1000 is available with BK7G18 glass with N2 inside the cavity.
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Handling Precautions
For proper handling and storage conditions, refer to the Cypress application note AN52561, Image Sensor Handling and Best Practices at www.cypress.com.
Return Material Authorization (RMA)
Cypress packages all of its image sensor products in a clean room environment under strict handling procedures and ships all image sensor products in ESD-safe, clean-room-approved shipping containers. Products returned to Cypress for failure analysis should be handled under these same conditions and packed in its original packing materials, or the customer may be liable for the product.
Limited Warranty
Cypress's Image Sensor Business Unit warrants that the image sensor products to be delivered hereunder, if properly used and serviced, will conform to Seller's published specifications and will be free from defects in material and workmanship for one (1) year following the date of shipment. If a defect were to manifest itself within 1 (one) year period from the sale date, Cypress will either replace the product or give credit for the product.
Ordering Code Definition
CY I S1 S M 1000 AA - H H C S Cypress Prefix I=Im age Sensors STAR S=Standard Process M=Mono 1.0 MegaPixel S=Space Qualified, ES: Engg Com m ercial Tem perature range H=BK7G16 Glass Package: H= JLCC Functionality Placeholder
RoHS (Pb-free) Compliance
This paragraph reports the use of hazardous chemical substances as required by the RoHS Directive (excluding packing material). Table 10. Chemical Substances in STAR250 Sensor Chemical Substance Lead Cadmium Mercury Hexavalent chromium PBB (Polybrominated biphenyls) PBDE (Polybrominated diphenyl ethers) Any intentional content NO NO NO NO NO NO If there is any intentional content, in which portion is it contained? maintain the required performance and function of the intended product 2. A case that the above material, which is used intentionally in the manufacturing process, is contained in or adhered to the inquired product. The following case is not treated as "intentional content": A case that the above material is contained as an impurity into raw materials or parts of the intended product. The impurity is defined as a substance that cannot be removed industrially, or it is produced at a process like chemical composing or reaction and it cannot be removed technically.
Information on Pb-Free Soldering
The product cannot withstand a Pb-free soldering process. Reflow or wave soldering is not recommended. Hand soldering is needed for this part type. Solder one pin on each side and let the sensor cool down for minimum 1 minute before continuing. Note: "Intentional Content" is defined as any material demanding special attention that is contained into the inquired product by these cases: 1. A case that the above material is added as a chemical composition into the inquired product intentionally to produce and
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Acronyms
Acronym ADC AFE BL CDM CDS CMOS CRC DAC DDR DFT DNL DS DSNU EIA ESD FE FF FOT FPGA FPN FPS FS HBM IMG INL analog front end black pixel data Charged Device Model correlated double sampling complementary metal oxide semiconductor cyclic redundancy check digital-to-analog converter double data rate design for test differential nonlinearity Double Sampling dark signal nonuniformity Electronic Industries Alliance electrostatic discharge frame end fill factor frame overhead time Field Programmable Gate Array fixed pattern noise frames per second frame start Human Body Model regular pixel data integral nonlinearity Description analog-to-digital converter Acronym IP LE LS LSB LVDS MBS MSB PGA PLS PRBS PRNU QE RGB RMA RMS ROI ROT S/H SNR SPI TBD TIA TJ TR % RH line end line start least significant bit low-voltage differential signaling mixed boundary scan most significant bit programmable gain amplifier parasitic light sensitivity pseudo-random binary sequence pixel random nonuniformity quantum efficiency red green blue Return Material Authorization root mean square region of interest row overhead time sample and hold signal-to-noise ratio serial peripheral interface to be determined Telecommunications Industry Association Junction Temperature training pattern Percent Relative Humidity Description intellectual property
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STAR1000
Glossary
conversion gain A constant that converts the number of electrons collected by a pixel into the voltage swing of the pixel. Conversion gain = q/C where q is the charge of an electron (1.602E 19 Coulomb) and C is the capacitance of the photodiode or sense node. Differential nonlinearity (for ADCs) Dark signal nonuniformity. This parameter characterizes the degree of nonuniformity in dark leakage currents, which can be a major source of fixed pattern noise. A parameter that characterizes the optically active percentage of a pixel. In theory, it is the ratio of the actual QE of a pixel divided by the QE of a photodiode of equal area. In practice, it is never measured. Integral nonlinearity (for ADCs) Infrared. IR light has wavelengths in the approximate range 750 nm to 1 mm. Photometric unit of luminance (at 550 nm, 1lux = 1 lumen/m2 = 1/683 W/m2) Variation of pixel signals within a region of interest (ROI). The ROI typically is a rectangular portion of the pixel array and may be limited to a single color plane. Units for light measurement that take into account human physiology. Parasitic light sensitivity. Parasitic discharge of sampled information in pixels that have storage nodes. Photo-response nonuniformity. This parameter characterizes the spread in response of pixels, which is a source of FPN under illumination. Quantum efficiency. This parameter characterizes the effectiveness of a pixel in capturing photons and converting them into electrons. It is photon wavelength and pixel color dependent. Noise associated with all circuitry that measures and converts the voltage on a sense node or photodiode into an output signal. The process by which a pixel photodiode or sense node is cleared of electrons. "Soft" reset occurs when the reset transistor is operated below the threshold. "Hard" reset occurs when the reset transistor is operated above threshold. Noise due to variation in the reset level of a pixel. In 3T pixel designs, this noise has a component (in units of volts) proportionality constant depending on how the pixel is reset (such as hard and soft). In 4T pixel designs, reset noise can be removed with CDS. The standard measure of photodiode performance (regardless of whether it is in an imager or not). Units are typically A/W and are dependent on the incident light wavelength. Note that responsivity and sensitivity are used interchangeably in image sensor characterization literature so it is best to check the units. Region of interest. The area within a pixel array chosen to characterize noise, signal, crosstalk, and so on. The ROI can be the entire array or a small subsection; it can be confined to a single color plane. In 4T pixel designs, a capacitor used to convert charge into voltage. In 3T pixel designs it is the photodiode itself. A measure of pixel performance that characterizes the rise of the photodiode or sense node signal in Volts upon illumination with light. Units are typically V/(W/m2)/sec and are dependent on the incident light wavelength. Sensitivity measurements are often taken with 550 nm incident light. At this wavelength, 1 683 lux is equal to 1 W/m2; the units of sensitivity are quoted in V/lux/sec. Note that responsivity and sensitivity are used interchangeably in image sensor characterization literature so it is best to check the units. The photon wavelength dependence of sensitivity or responsivity. Signal-to-noise ratio. This number characterizes the ratio of the fundamental signal to the noise spectrum up to half the Nyquist frequency. Noise that varies from frame to frame. In a video stream, temporal noise is visible as twinkling pixels.
DNL DSNU fill-factor
INL IR Lux pixel noise photometric units PLS PRNU QE read noise reset
reset noise
responsivity
ROI sense node sensitivity
spectral response SNR temporal noise
Document Number: 38-05714 Rev. *F
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STAR1000
STAR1000 Evaluation System
For evaluating purposes, a STAR1000 evaluation kit is available on loan basis only. The STAR1000 evaluation kit consists of a multifunctional digital board (memory, sequencer, and IEEE 1394 Fire Wire interface) and an analog image sensor board. Visual Basic software (under Windows 2000 or XP) allows the grabbing and display of images from the sensor. All acquired images can be stored in different file formats (8 or 16-bit). All settings can be adjusted dynamically to evaluate the sensors specs. Default register values can be loaded to start the software in a desired state. All products and company names mentioned in this document may be the trademarks of their respective holders.
Document Number: 38-05714 Rev. *F
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STAR1000
Document History Page
Document Title: STAR1000 - 1M Pixel Radiation Hard CMOS Image Sensor Document Number: 38-05714 Revision ** *A *B *C *D *E *F ECN 310213 603177 649371 2765859 2788268 3153394 Orig. of Change SIL QGS FPW NVEA NVEA NVEA Submission Date See ECN See ECN See ECN See ECN 09/18/09 Initial Cypress release Converted to Framemaker Format Package spec label update + ordering information update Bond diagram update + review Updated Ordering Information table Description of Change
2738591 FOSTMP2
10/16/2009 Added Mechanical Specifications table. Updated Soldering and Handling information. 1/25/2011 Updated Ordering Information on page 1 to reflect pruned MPNs, Package Drawing on page 17. Updated Limited Warranty on page 20 and added Ordering Code Definition on page 20, Acronyms on page 21 and Glossary on page 22. Updated datasheet to reflect that demo kits are on loan basis only. Updated Sales, Solutions, and Legal Information on page 24.
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer's representatives, and distributors. For more information on Image sensor products, please contact imagesensors@cypress.com. Cypress offers standard and customized CMOS image sensors for consumer as well as industrial and professional applications. Consumer applications include the fast growing high volume cell phone, digital still cameras as well as automotive applications. Cypress' CMOS image sensors are characterized by very high pixel counts, large area, very high frame rates, large dynamic range, and high sensitivity.
(c) Cypress Semiconductor Corporation, 2005-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress' product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 38-05714 Rev. *F
Revised January 25, 2011
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All products and company names mentioned in this document may be the trademarks of their respective holders.
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